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IS61LV256AL Datenblatt(PDF) 7 Page - Integrated Silicon Solution, Inc

Teilenummer IS61LV256AL
Bauteilbeschribung  32K x 8 LOW VOLTAGE CMOS STATIC RAM
PDF  12 Pages
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Hersteller  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61LV256AL Datenblatt(HTML) 7 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. C
07/29/09
IS61LV256AL
AC WAVEFORMS
WRITE CYCLE NO. 1 (CE Controlled, OEisHIGHorLOW)(1)
DATAUNDEFINED
tWC
VALIDADDRESS
tSCE
tPWE1
tPWE2
tAW
tHA
HIGH-Z
tHD
tSA
tHZWE
ADDRESS
CE
WE
DOUT
DIN
DATAINVALID
tLZWE
tSD
CE_WR1.eps
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (OverOperatingRange)
-10 ns
-12 ns
Symbol
Parameter
Min.
Max.
Min. Max.
Unit
twc
WriteCycleTime
10
12
ns
tsce
CE
toWriteEnd
8
8
ns
taw
AddressSetupTime
8
8
ns
to Write End
tha
AddressHold
0
0
ns
from Write End
tsa
AddressSetupTime
0
0
ns
tPwe1
WE
PulseWidth(OEHIGH)
7
8
ns
tPwe2
WE
PulseWidth(OELOW)
10
12
ns
tsd
DataSetuptoWriteEnd
6.5
7
ns
thd
DataHoldfromWriteEnd
0
0
ns
thzwe(3)
WE
LOWtoHigh-ZOutput
3.5
5
ns
tlzwe(3)
WE
HIGHtoLow-ZOutput
0
0
ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0to3.0V
andoutputloadingspecifiedinFigure1.
2. TheinternalwritetimeisdefinedbytheoverlapofCELOWandWELOW.Allsignalsmustbeinvalidstatestoinitiatea
Write,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingor
falling edge of the signal that terminates the Write.
3. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.



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