www.macom.com

AMP and Connecting at a Higher Level are trademarks.

The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.

V1.00

Beam Lead Gallium Arsenide Tuning Varactor Diode

ML46580S-992

Electrical Measurements at Room Temperature d.c. and a.c. Parameters

MIL-STD-750

Test

Limits

No.

Characteristics

Symbol

Test Method

Conditions

Min.

Max.

Units

1Forward Voltage

V

F1

4011

I

—

1.4

V

2

Reverse Current 1

I

R1

4016

V

—

20

nA

3

Reverse Current 2

I

R2

4016

V

—

10

µA

4

Junction Capacitance

C

J 4

4001

V

0.45

0.55

pF

F = 1 MHz

5

Quality Factor

Q

4

see Note 2

V

3000

—

—

F = 1 MHz

6

Total Capacitance Ratio

C

4001

V

4.5:1

6.5:1

—

V

F = 1 MHz

see Note 3

7Gamma

γ

see Note 4

V

1.125

1.375

—

V

Notes:

2. Quality Factor is measured on a sample of 10 Beam Lead devices selected at random from the production wafer and assembled in a ceramic

microstrip package. The measurement is carried out at a test frequency above 1 GHz and extrapolated to 50 MHz.

3. Total Capacitance Ratio is measured on the sample of 10 devices used for Q measurement.

4. Measurement/Calculation of Capacitance-Voltage Slope Exponent (Gamma).

The capacitances of a sample of 10 diodes taken at random from the production lot are measured at 2.0, 3.0, 4.0, 6.0, 8.0, 9.0, 10.0, 12.0, volts

reverse bias voltage. Junction capacitance C

then calculated between each pair of adjacent voltages using the following formula:

Electrical Measurements at High and Low Temperature, -55°C to +125°C

MIL-STD-750

Test

Limits

No.

Characteristics

Symbol

Test Method

Conditions

Min.

Max.

Units

1

Reverse Current

I

R

4016

V

—

50

µA

Parameter Drift Values

No.

Characteristics

Symbol

Change Limits

∆

Test Conditions

2

Reverse Current

I

R

± 10 nA or ± 100% whichever is the

greater referred to the initial measurement

V

3Forward Voltage

V

F

± 100 mV or ± 100%

I

log

log

γ =