MMBFJ309L datasheet(2/5 Pages) ONSEMI

2 / 5 page

MMBFJ309L, MMBFJ310L, SMMBFJ310L

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

(IG = −1.0 mAdc, VDS = 0)

V(BR)GSS

−25

−

Vdc

Gate Reverse Current (VGS = −15 Vdc)

Gate Reverse Current (VGS = −15 Vdc, TA = 125°C)

IGSS

−

−1.0

nAdc

mAdc

Gate Source Cutoff Voltage

MMBFJ309

(VDS = 10 Vdc, ID = 1.0 nAdc)

MMBFJ310, SMMBFJ310

VGS(off)

−1.0

−2.0

−

−4.0

−6.5

Vdc

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current

MMBFJ309

(VDS = 10 Vdc, VGS = 0)

MMBFJ310, SMMBFJ310

IDSS

−

mAdc

Gate−Source Forward Voltage

(IG = 1.0 mAdc, VDS = 0)

VGS(f)

−

1.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

|Yfs|

8.0

−

mmhos

Output Admittance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

|yos|

−

250

mmhos

Input Capacitance

(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)

Ciss

−

5.0

Reverse Transfer Capacitance

(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)

Crss

−

2.5

Equivalent Short−Circuit Input Noise Voltage

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)

−

nV Hz

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