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SGA1263Z Datenblatt(PDF) 3 Page - RF Micro Devices

Teilenummer SGA1263Z
Bauteilbeschribung  DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
PDF  6 Pages
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Hersteller  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGA1263Z Datenblatt(HTML) 3 Page - RF Micro Devices

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DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA1263Z
Application Schematic for +5V Operation at 900MHz
Application Schematic for +5V Operation at 1900MHz
Pin
Function
Description
1GND
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-
ble.
2GND
Same as Pin 1.
3RF IN
RF input pin. This pin requires the ise of an external DC blocking capacitor chosen for the frequency of operation.
4VCC
Supply Connection. This pin should be bypassed with suitable capacitor(s).
5GND
Same as Pin 1.
6RF OUT
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
270 Ω
100pF
1uF
68pF
100pF
50Ω
microstrip
50Ω
microstrip
VCC=+5V
3
4
6
1,2,5
Note: A bias resistor is needed for
stability over temperature
270 Ω
68pF
1uF
22pF
68pF
50Ω
microstrip
50Ω
microstrip
VCC=+5V
3
4
6
1,2,5
Recommended Bias Resistor Values
Supply
Voltage(Vs)
3.6V
5V
7.5V
9V
12V
Rbias
(Ohms)
100
275
588
775
1150



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