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SGC4263Z Datenblatt(PDF) 1 Page - RF Micro Devices |
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SGC4263Z Datenblatt(HTML) 1 Page - RF Micro Devices |
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1 / 9 page ![]() Features 1 of 9 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SGC4263Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utiliz- ing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4263Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4263Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50 . Gain, RL and NF versus Frequency -30 -20 -10 0 10 20 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Gain IRL ORL S11 S21 S22 Bias Tee Data, ZS = ZL = 50 Ohms, TL Single Fixed 3V Supply No Dropping Resistor Required Patented Self-Bias Circuitry P1dB=15.1dBm at 1950MHz OIP3=30dBm at 1950MHz Robust 1000V ESD, Class 1C HBM Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS, WCDMA IF Amplifier Wireless Data, Satellite DS140502 Package: SOT-363 SGC4263Z Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain, (G) 15.0 dB 500MHz 13.2 14.7 16.2 dB *850MHz 12.6 14.0 15.4 dB 1950MHz Output Power at 1dB Compression (P1dB) 15.2 dBm 500MHz 15.1 dBm 850MHz 13.6 15.1 dBm 1950MHz Output Third Order Intercept Point (OIP3) 32.0 dBm 500MHz 30.5 dBm 850MHz 27.0 30.0 dBm 1950MHz Input Return Loss, (IRL) 17.0 23.5 dB 1950MHz Output Return Loss, (ORL) 17.0 21.0 dB 1950MHz Noise Figure (NF) 3.3 4.5 dB 1930MHz Device Operating Voltage, (VD) 3.0 V Device Operating Current, (ID)44 55 64 mA Thermal Resistance 130 °C/W (Junction - Lead) (Rth, j-l) Test Conditions: VD=3V, ID=55mA Typ., TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit Data Unless Otherwise Noted |
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