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SGC4263Z Datenblatt(PDF) 1 Page - RF Micro Devices

Teilenummer SGC4263Z
Bauteilbeschribung  50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
PDF  9 Pages
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Hersteller  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGC4263Z Datenblatt(HTML) 1 Page - RF Micro Devices

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Features
1 of 9
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SGC4263Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4263Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4263Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50
.
Gain, RL and NF versus Frequency
-30
-20
-10
0
10
20
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Gain
IRL
ORL
S11
S21
S22
Bias Tee Data, ZS = ZL = 50 Ohms, TL
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=15.1dBm at 1950MHz
OIP3=30dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
DS140502
Package: SOT-363
SGC4263Z
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain, (G)
15.0
dB
500MHz
13.2
14.7
16.2
dB
*850MHz
12.6
14.0
15.4
dB
1950MHz
Output Power at 1dB Compression
(P1dB)
15.2
dBm
500MHz
15.1
dBm
850MHz
13.6
15.1
dBm
1950MHz
Output Third Order Intercept Point
(OIP3)
32.0
dBm
500MHz
30.5
dBm
850MHz
27.0
30.0
dBm
1950MHz
Input Return Loss, (IRL)
17.0
23.5
dB
1950MHz
Output Return Loss, (ORL)
17.0
21.0
dB
1950MHz
Noise Figure (NF)
3.3
4.5
dB
1930MHz
Device Operating Voltage, (VD)
3.0
V
Device Operating Current, (ID)44
55
64
mA
Thermal Resistance
130
°C/W
(Junction - Lead) (Rth, j-l)
Test Conditions: VD=3V, ID=55mA Typ., TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit
Data Unless Otherwise Noted


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