PH1617-2 datasheet(1/4 Pages) MACOM

Teilenummer	PH1617-2

Bauteilbeschribung	Wireless Bipolar Power Transistor, 2W 1.6 - 1.7 GHz

PDF	4 Pages

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Hersteller	MACOM [Tyco Electronics]

Direct Link	http://www.macom.com

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1

Wireless Bipolar Power Transistor

2W, 16 -1.7 GHz

M/A-COM Products

Released - Rev. 07.07

PH1617-2

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

•

Designed for linear amplifier applications

•

Class AB: -33 dBc typ. 3rd IMD at 2 W PEP

•

Class A: +44 dBm typ. 3rd order intercept point

•

Common emitter configuration

•

Internal input impedance matching

•

Diffused emitter ballasting

Outline Drawing

Notes: (unless otherwise specified)

1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)

ABSOLUTE MAXIMUM RATING AT 25°C

ELECTRICAL SPECIFICATIONS AT 25°C

Parameter

Symbol

Rating

Units

Collector-Base Voltage

VCBO

65

V

Collector-Emitter Voltage

VCES

65

V

Emitter-Base Voltage

VEBO

3.0

V

Collector Current

IC

2.0

A

Power Dissipation

PD

13.5

W

Junction Temperature

TJ

200

°C

Storage Temperature

TSTG

-55 to + 150

°C

Thermal Resistance

θJC

13

°C/W

Parameter

Symbol

Min

Max

Units

Test Conditions

Collector-Emitter Breakdown Voltage

BVCES

65

-

V

IC = 5 mA

Collector-Emitter Leakage Current

ICES

-

1.0

mA

VCE = 25 V

Collector-Base Breakdown Voltage

BVCEO

22

-

V

IC = 5 mA

Collector-Base Breakdown Voltage

BVCER

30

V

IC = 5 mA, RBE=220 Ω

Emitter-Base Breakdown Voltage

BVEBO

3.0

-

V

IB = 5 mA

DC Forward Current Gain

hFE

15

120

-

VCE = 5 V, IC = 200 A

Power Gain

GP

10

-

dB

VCC = 25V, ICQ = 25 mA, Pout = 2.0 W, F =1.60, 1.65, 1.70 GHz

Collector Efficiency

ŋC

35

-

%

VCC = 25V, ICQ = 25 mA, Pout = 2.0 W, F =1.60. 1.65, 1.70 GHz

Input Return Loss

RL

10

-

dB

VCC = 25V, ICQ = 25 mA, Pout = 2.0 W, F =1.60. 1.65, 1.70 GHz

Load Mismatch Tolerance

VSWR-T

-

5:1

-

VCC = 25V, ICQ = 25 mA, Pout = 2.0 W, F =1.60. 1.65, 1.70 GHz

3rd Order IMD

IMD3

-

-32

dBc

VCC = 25V, ICQ = 25 mA, Pout = 2.0 W PEP F =1650 MHz, Δ F=100kHz

F (GHz)

ZIN (Ω)

ZLOAD (Ω)

1.60

3.5+j8.2

6.6-j13.5

1.65

2.0+j5.0

6.4-j13.1

1.70

4.2+j8.7

6.3-j12.8

TYPICAL OPTIMUM DEVICE IMPEDANCES

INPUT

NETWORK

OUTPUT

NETWORK

ZLOAD

ZIN

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