| Datenblatt-Suchmaschine für elektronische Bauteile |
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E30A2CR Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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E30A2CR Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page ![]() 2002. 10. 9 1/2 SEMICONDUCTOR TECHNICAL DATA E30A2CS, E30A2CR STACK SILICON DIFFUSED DIODE Revision No : 2 ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES ・Average Forward Current : I O=30A. ・Repetitive Peak Reverse Voltage : V RRM=200V. POLARITY E30A2CS (+ Type) E30A2CR (- Type) MAXIMUM RATING (Ta=25 ℃) ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A - - 1.2 V Repetitive Peak Reverse Current IRRM VRRM=200V - - 50 μA Reverse Recovery Time trr IF=0.1A, IR=0.1A - - 15 μS Temperature Resistance Rth DC total junction to case - - 1.0 ℃/W CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 200 V Average Forward Current IF(AV) 30 A Peak 1 Cycle Surge Current IFSM 350 (50Hz) A Junction Temperature Tj -40 ~150 ℃ Storage Temperature Range Tstg -40 ~150 ℃ |
Ähnliche Teilenummer - E30A2CR_15 |
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Ähnliche Beschreibung - E30A2CR_15 |
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