E30A27VR_15 datasheet(1/2 Pages) KEC

Teilenummer	E30A27VR

Bauteilbeschribung	STACK SILICON DIFFUSED DIODE

PDF	2 Pages

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Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 2 page

2002. 10. 9

1/2

SEMICONDUCTOR

TECHNICAL DATA

E30A27VS, E30A27VR

STACK SILICON DIFFUSED DIODE

Revision No : 1

ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

・Average Forward Current : I

O=30A.

POLARITY

E30A27VS

E30A27VR

(+ Type)

(- Type)

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

A1

A2

A3

B1

D3

D2

B2

C1

C2

D1

2.0 0.3

1.9 0.3

8.5 0.3

E

10.0 0.3

13.5 0.3

24.0 0.5

10.0 0.3

5.0 0.3

2.5 0.3

5.0 0.3

4.5 0.3

9.0 0.3

1.0 0.3

4.4 0.5

0.6 0.3

DIM

MILLIMETERS

F

G

H

T

A3

A2

A1

D3

EF

G

MR

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Zener Voltage

VZ

IZ=10mA

24

-

30

V

Peak Forward Voltage

VFM

IFM=100A

-

1.2

V

Repetitive Peak Reverse Current

IRRM

VRRM=24V

-

50

μA

Zener Voltage

Temperature Coefficient

rZ

IZ=10mA

23

-

36

mV/

℃

Reverse Recovery Time

trr

IF=0.1A, IR=0.1A

-

15

μS

Temperature Resistance

Rth

DC total junction to case

-

1.0

℃/W

CHARACTERISTIC

SYMBOL

RATING

UNIT

DC Reverse Voltage

VDC

24

V

Average Forward Current

IF(AV)

30

A

Peak 1 Cycle Surge Current

IFSM

250 (50Hz)

A

Non-Repetitive Reverse 1 Cycle

Surge Current

IRSM

50

A

Junction Temperature

Tj

-40

～150

℃

Storage Temperature Range

Tstg

-40

～150

℃

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