IRG7PH30K10DPBF datasheet(2/10 Pages) IRF

2 / 10 page

IRG7PH30K10DPbF

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Notes:

VCC = 80% (VCES), VGE = 20V, L = 36µH, RG = 33Ω.

Pulse width limited by max. junction temperature.

Refer to AN-1086 for guidelines for measuring V

(BR)CES safely.

Rθ is measured at TJ of approximately 90°C.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Conditions

Ref.Fig

V(BR)CES

Collector-to-Emitter Breakdown Voltage

1200

—

VGE = 0V, IC = 250µA e

CT6

∆V(BR)CES/∆TJ

Temperature Coeff. of Breakdown Voltage

—1.11

—

V/°C VGE = 0V, IC = 1mA (25°C-150°C)

CT6

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.05

2.35

IC = 9.0A, VGE = 15V, TJ = 25°C

5,6,7

—2.56

—

IC = 9.0A, VGE = 15V, TJ = 150°C

9,10,11

VGE(th)

Gate Threshold Voltage

5.0

—

7.5

VCE = VGE, IC = 400µA

9,10

∆VGE(th)/∆TJ

Threshold Voltage temp. coefficient

—

-15

—

mV/°C VCE = VGE, IC = 400µA (25°C - 150°C)

11,12

gfe

Forward Transconductance

—

6.2

—

VCE = 50V, IC = 9.0A, PW = 80µs

ICES

Collector-to-Emitter Leakage Current

—

1.0

µA

VGE = 0V, VCE = 1200V

—400

—

VGE = 0V, VCE = 1200V, TJ = 150°C

VFM

Diode Forward Voltage Drop

—

2.0

3.0

IF = 9.0A

—2.1

—

IF = 9.0A, TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±30V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Ref.Fig

Total Gate Charge (turn-on)

—

IC = 9.0A

Qge

Gate-to-Emitter Charge (turn-on)

—

8.7

nC VGE = 15V

CT1

Qgc

Gate-to-Collector Charge (turn-on)

—

VCC = 600V

Eon

Turn-On Switching Loss

—

530

760

IC = 9.0A, VCC = 600V, VGE = 15V

CT4

Eoff

Turn-Off Switching Loss

—

380

600

µJ

RG = 22

Ω, L = 1.0mH, LS = 150nH, TJ = 25°C

Etotal

Total Switching Loss

—

910

1360

Energy losses include tail & diode reverse recovery

td(on)

Turn-On delay time

—

IC = 9.0A, VCC = 600V, VGE = 15V

CT4

Rise time

—

RG = 22

Ω, L = 1.0mH, LS = 150nH, TJ = 25°C

td(off)

Turn-Off delay time

—

110

130

Fall time

—

Eon

Turn-On Switching Loss

—

810

—

IC = 9.0A, VCC = 600V, VGE=15V

13,15

Eoff

Turn-Off Switching Loss

—

680

—

µJ

RG=22

Ω, L=1.0mH, LS=150nH, TJ = 150°C eÃ

CT4

Etotal

Total Switching Loss

—

1490

—

Energy losses include tail & diode reverse recovery

WF1, WF2

td(on)

Turn-On delay time

—

IC = 9.0A, VCC = 600V, VGE = 15V

14,16

Rise time

—

RG = 22

Ω, L = 1.0mH, LS = 150nH

CT4

td(off)

Turn-Off delay time

—

130

—

TJ = 150°C

WF1

Fall time

—

260

—

WF2

Cies

Input Capacitance

—

1070

—

VGE = 0V

Coes

Output Capacitance

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1.0Mhz

TJ = 150°C, IC = 36A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 960V, Vp =1200V

CT2

Rg = 22

Ω, VGE = +20V to 0V

SCSOA

Short Circuit Safe Operating Area

—

µs

TJ = 150°C, VCC = 600V, Vp =1200V

22, CT3

Rg = 22

Ω, VGE = +15V to 0V

WF4

Erec

Reverse Recovery Energy of the Diode

—

710

—

µJ

TJ = 150°C

17,18,19

trr

Diode Reverse Recovery Time

—

140

—

VCC = 600V, IF = 9.0A

20,21

Irr

Peak Reverse Recovery Current

—

VGE = 15V, Rg = 20

Ω, L =1.0mH, Ls = 150nH

WF3

Conditions

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