2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may

be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)

matching.

5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.

TA=25°C, Zo=50 Ω, LO=+15dBm, IF=2GHz

Parameter

RF=21GHz, LO=11.5GHz

RF=23GHz, LO=12.5GHz

RF=26GHz, LO=14GHz

Unit

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Conversion Loss, CL

11

12

10

12

11

12

dB

Input Third Order Intercept, IIP3

11

12

10.5

11.7

8.5

11.8

dB

2LO-R Leakage, 2LO-R

-44

-35

-40

-35

-42

-30

dBm

2LO-I Leakage, 2LO-I

-61

-52.5

-64

-51.7

-60

-54

dBm

RF=18-30GHz, LO=9-15GHz

RF=30-40GHz, LO=15-20GHz

L-R Leakage, L-R

-30

-35

dB

L-I Leakage, L-I

-35

-30

dB

Note:

1. Production RF tested at 21, 23 and 26 GHz in up-converter configuration at Low Side LO.

2. All tested parameters are guaranteed with the following measurement accuracy:

RF=21GHz: ±1 dBm for RF-leakage, ±2.0 dBm for IF-leakage, ±0.5dB for Conversion Loss, ±0.5 dBm for IIP3

RF=23GHz: ±1 dBm for RF-leakage, ±2.5 dBm for IF-leakage, ±0.5dB for Conversion Loss, ±0.5 dBm for IIP3

RF=26GHz: ±1 dBm for RF-leakage, ±2.5 dBm for IF-leakage, ±0.5dB for Conversion Loss, ±0.5 dBm for IIP3

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

Parameter

Min.

Typical

Max.

Unit

Comments

RF Frequency, RFfreq

18

40

GHz

LO Frequency, LOfreq

9

20

GHz

IF Frequency, IFfreq

DC

3.5

GHz

LO Power, LO

+12

+15

+22

dBm

Absolute Minimum and Maximum Ratings

Table 3. Minimum and Maximum Ratings

Parameter

Min.

Max.

Unit

Comments

RF CW Input Power, Pin

+25

dB

Storage Temperature, Tstg

-65

+150

°C

Maximum Assembly Temperature, Tmax

300

°C

60 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.