2SA963_15 datasheet(2/4 Pages) JMNIC

Teilenummer	2SA963

Bauteilbeschribung	Silicon PNP Power Transistors

PDF	4 Pages

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Hersteller	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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2 / 4 page

JMnic

Product Specification

Silicon PNP Power Transistors

2SA963

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-2mA;IB=0

-40

V(BR)CBO

Collector-base breakdown voltage

IC=-1mA ;IE=0

-50

VCEsat

Collector-emitter saturation voltage

IC=-1.5A ;IB=-150mA

-1.0

VBEsat

Base-emitter saturation voltage

IC=-2A ;IB=-0.2A

-1.5

ICBO

Collector cut-off current

VCB=-20V; IE=0

-1

μA

ICEO

Collector cut-off current

VCE=-10V; IB=0

-100

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-10

μA

hFE

DC current gain

IC=-1A ; VCE=-5V

220

COB

Output capacitance

IE=0 ; VCB=-5V;f=1MHz

Transition frequency

IE=0.5A ; VCB=-5V,f=200MHz

150

MHz

hFE Classifications

80-160

120-220

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