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3

Microprocessor and Non-Volatile

Memory Supervisory Circuits

ELECTRICAL CHARACTERISTICS (continued)

PARAMETER

CONDITIONS

ms

MIN

TYP

MAX

UNITS

µA

LOWLINE Short-Circuit Current

10

50

1.00

1.60

2.25

1.00

1.60

2.25

4.7nF capacitor connected from SWT to GND,

70

Watchdog Timeout Period

4.7nF capacitor connected from SWT to GND,

MAX792/MAX820L/M

100

sec

50

120

210

Low-Line Threshold Voltage

MAX792/MAX820R/S/T

40

100

210

mV

100

Watchdog Input Pulse Width

1.25

1.30

1.35

Low-Line Threshold Voltage

(External Programming Mode)

300

ns

1.274

1.30

1.326

V

Low-Line Hysteresis

(Internal Threshold Mode)

20

mV

0.01

0.30

0.1

0.4

WDO Output Voltage

V

WDPO to WDO Delay

70

ns

WDPO Duration

0.5

1.7

6.0

ms

0.01

0.3

0.1

0.4

WDPO Output Voltage

V

0.8

WDI Threshold Voltage

0.2

V

WDI Input Current

±1

µA

LLIN/REFOUT Leakage Current

External Programming Mode

±0.01

±25

nA

Low-Line Comparator Delay

450

µs

0.4

LOWLINE Voltage

V

LOW-LINE COMPARATOR

WATCHDOG FUNCTION