S8A

THRU

S8M

8 Amp

Silicon Rectifier

50 to 1000 Volts

Features

•

For Surface Mount Applications

•

Extremely Low Thermal Resistance

•

Easy Pick And Place

•

High Temp Soldering: 250

°C for 10 Seconds At Terminals

•

High Current Capability

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.200

.214

5.08

5.43

B

.177

.203

4.70

5.30

C

.002

.005

.05

.13

D

---

.02

---

.51

E

.053

.067

1.35

1.70

F

.168

.179

4 .27

4.55

G

.320

.330

8.13

8.38

H

.239

.243

6.08

6.18

J

.234

.240

5.95

6.10

Maximum Ratings

•

Operating Temperature: -55

°C to +150°C

•

Storage Temperature: -55

°C to +150°C

•

Maximum Thermal Resistance; 8

°C/W Junction To Lead

Microsemi

Part

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

Maximum

RMS

Voltage

Maximum

DC

Blocking

Voltage

S8A

S8A

50V

35V

50V

S8B

S8B

100V

70V

100V

S8D

S8D

200V

140V

200V

S8G

S8G

400V

280V

400V

S8J

S8J

600V

420V

600V

S8K

S8K

800V

560V

800V

S8M

S8M

1000V

700V

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

8.0A

°C

Peak Forward Surge

Current

300A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

1.20V

°C*

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

10

µA

100

µA

°C

°C

Typical Junction

Capacitance

150pF

Measured at

*Pulse test: Pulse width 200

µsec, Duty cycle 2%

0.070”

0.190

0.200

SUGGESTED SOLDER

PAD LAYOUT

H

J

E

F

G

A

B

D

C

Cathode Band

DO-214AB

(SMCJ) (Round Lead)

omponents

21201 Itasca Street Chatsworth



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