 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SB798G-X-AB3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
2SB798G-X-AB3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
|
|
1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R208-020.C POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) ORDERING INFORMATION Order Number Package Pin Assignment Packing 1 2 3 2SB798G-x-AB3-R SOT-89 B C E Tape Reel Note: Pin Assignment: B: Base C: Collector E: Emitter MARKING |
Ähnliche Teilenummer - 2SB798G-X-AB3-R |
|
Ähnliche Beschreibung - 2SB798G-X-AB3-R |
|
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
