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MJD210G-TN3-R Datenblatt(PDF) 3 Page - Unisonic Technologies

Teilenummer MJD210G-TN3-R
Bauteilbeschribung  PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
PDF  5 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MJD210G-TN3-R Datenblatt(HTML) 3 Page - Unisonic Technologies

  MJD210G-TN3-R Datasheet HTML 1Page - Unisonic Technologies MJD210G-TN3-R Datasheet HTML 2Page - Unisonic Technologies MJD210G-TN3-R Datasheet HTML 3Page - Unisonic Technologies MJD210G-TN3-R Datasheet HTML 4Page - Unisonic Technologies MJD210G-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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MJD210
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R213-001.C
TYPICAL CHARACTERISTICS
25
20
15
10
5
0
25
50
75
100
125
150
Temperature,T(℃)
TC
T A
2.5
2
1.5
T A
TC
1
Power Derating
25
µs
+11V
-9V
tr，tf≤10ns
Duty Cycle=1%
RB and RC Varied to Obtain Desired Current Levels
D1 Must be Fast Recovery Type, e.g.:
1N5825 Used Above IB ≈ 100mA for PNP Test
Circuit MSD6100 Used Below IB≈100mA Reverse
All Polaritries
51
-4V
RB
SCOPE
+30V
VCC
RC
D1
VDS=10V
ID=6V
(Surface Mount )
Switching Time Test Circuit
0.5
0
1000
100
10
1
0.01
0.1
1
10
0.02 0.03 0.05
5
3
2
0.5
0.3
0.2
2
3
5
50
30
20
500
300
200
Collector Current,IC (A)
Turn-On Time
10K
1K
100
10
0.01
0.1
1
10
0.02 0.03 0.05
5
3
2
0.5
0.3
0.2
20
30
50
500
300
200
5K
3K
2K
Turn-Off Time
tD
tF
tS
tF
Collector Current, IC (A)
(VCC=30V,IC/IB=10,TJ=25℃)
(VCC=30V,IC/IB=10,IB1=IB2,TJ=25℃)



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