IMT2AG-AG6-R datasheet(2/4 Pages) UTC

2 / 4 page

IMT2A

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R215-003.E



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

-60

Collector to Emitter voltage

VCEO

-50

Emitter to Base Voltage

VEBO

-6

Collector Current

-150

Collector Power Dissipation (total)

300(Note)

Junction Temperature

150

°C

Storage Temperature

TSTG

-55~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. 200mW per element must not be exceeded.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector to Base Breakdown Voltage

BVCBO

IC =-50 μA

-60

Collector to Emitter Breakdown Voltage

BVCEO

IC =-1mA

-50

Emitter to Base Breakdown Voltage

BVEBO

IE =-50 μA

-6

Collector Cut Off Current

ICBO

VCB =-60 V

-0.1

μA

Emitter Cut Off Current

IEBO

VEB =-6 V

-0.1

μA

Collector to Emitter Saturation Voltage

VCE(SAT) IC=-50 mA, IB=-5 mA

-0.5

DC Forward Current Gain

hFE

VCE =-6 V, IC=-1mA

120

560

Transition Frequency

VCE =-12V,IE =2mA, f=100MHz (Note)

140

MHz

Output Capacitance

COB

VCB = -12V,IE =0mA,f=1MHz

Note: Transition frequency of the device.

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