Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

MMDT2907AG-AL6-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer MMDT2907AG-AL6-R
Bauteilbeschribung  NPN & PNP GENERAL PURPOSE AMPLIFIER
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMDT2907AG-AL6-R Datenblatt(HTML) 2 Page - Unisonic Technologies

  MMDT2907AG-AL6-R Datasheet HTML 1Page - Unisonic Technologies MMDT2907AG-AL6-R Datasheet HTML 2Page - Unisonic Technologies MMDT2907AG-AL6-R Datasheet HTML 3Page - Unisonic Technologies MMDT2907AG-AL6-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
MMDT2907A
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R218-028.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) (Note 1, 2)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
TR1
VCEO
30
V
TR2
-30
V
Collector-Base Voltage
TR1
VCBO
60
V
TR2
-60
V
Emitter-Base Voltage
TR1
VEBO
5.0
V
TR2
-5.0
V
Collector Current - Continuous
TR1
IC
500
mA
TR2
-500
mA
Total Device Dissipation
PD
300
mW
Derate above 25°C
2.4
mW/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
THERMAL DATA (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance, Junction to Ambient
θJA
415
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) (Note 2)
TR1
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1)
V(BR)CEO IC=10mA, IB=0
30
V
Collector-Base Breakdown Voltage
V(BR)CBO IC=10µA, IE=0
60
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
5.0
V
Collector Cutoff Current
ICBO
VCB=50V, IE=0
30
nA
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0
30
nA
ON CHARACTERISTICS
DC Current Gain
hFE
IC=1.0mA, VCE=10V
50
IC=10mA, VCE=10V
75
IC=150mA, VCE=10V (Note 1)
100
IC=300mA, VCE=10V (Note 1)
30
Collector-Emitter Saturation Voltage (Note 1)
VCE(sat)
IC=150mA, IB=15mA
0.4
V
IC=300mA, IB=30mA
1.4
V
Base-Emitter Saturation Voltage (Note 1)
VBE(sat)
IC=150mA, IB=15mA
1.3
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
fT
IC=50mA, VCE=20V,
f=100MHz
250
MHz
Output Capacitance
COBO
VCB=10V, IE=0, f=100kHz
4.0
pF
Input Capacitance
CIBO
VEB=2.0V, IC=0, f=100kHz
12
pF
Noise Figure
NF
IC=100µA, VCE=10V,
RS=1.0kΩ, f=1.0kHz
2.0
dB



Html Pages

1 2 3 4


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com