 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
UT2312G-AE3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT2312G-AE3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
|
|
1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-205.F 5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) < 40 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UT2312G-AE3-R SOT-23 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
Ähnliche Teilenummer - UT2312G-AE3-R |
|
Ähnliche Beschreibung - UT2312G-AE3-R |
|
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
