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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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UT3419G-AE3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT3419G-AE3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-391.F 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch. FEATURES * RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 UT3419G-AE2-R SOT-23-3 S G D Tape Reel UT3419G-AE3-R SOT-23 S G D Tape Reel Note: Pin Assignment: S: Source G: Gate D: Drain MARKING 34VG |
Ähnliche Teilenummer - UT3419G-AE3-R |
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Ähnliche Beschreibung - UT3419G-AE3-R |
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