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UT30P04L-TN3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer UT30P04L-TN3-R
Bauteilbeschribung  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
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UT30P04L-TN3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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UT30P04
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-465.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless Otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
TC=25°C
-21
A
Continuous Drain Current
TC=70°C
ID
-17
A
Pulsed Drain Current (Note 2)
IDM
-70
A
Avalanche Current
IAS
-27
A
Avalanche Energy (Note 3)
L=0.1mH
EAS
36
mJ
TC=25°C
30
W
Power Dissipation
TC=70°C
PD
20
W
Operating Junction Temperature
TJ
-55~150
°C
Storage Temperature
TSTG
-55~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. VDD=-20V. Starting TJ=25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
40
°C/W
Junction to Case
θJC
4.1
°C/W



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