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UT4406G-S08-R Datenblatt(PDF) 1 Page - Unisonic Technologies

Teilenummer UT4406G-S08-R
Bauteilbeschribung  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4406G-S08-R Datenblatt(HTML) 1 Page - Unisonic Technologies

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UNISONIC TECHNOLOGIES CO., LTD
UT4406
Power MOSFET
www.unisonic.com.tw
1 of 4
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-233.C
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UT4406 can provide excellent RDS(ON), low gate charge
and operation with gate voltages as low as 2.5V by using UTC’s
advanced trench technology which makes an excellent high side
switch for notebook CPU core DC-DC conversion.
FEATURES
* RDS(ON) < 14.8mΩ @ VGS=10V, ID=12A
* RDS(ON) < 17.5mΩ @ VGS=4.5V, ID=10A
* RDS(ON) < 26.8mΩ @ VGS=2.5V, ID=8A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
1.Gate
3.Source
2.Drain
SOP-8
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
Packing
12
3
4
56
7
8
UT4406G-S08-R
SOP-8
S
S
S
G
D
D
D
D
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING


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