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UT4422G-S08-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT4422G-S08-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4422 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-206.C N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 15 mΩ @ VGS =10V, ID =11A RDS(ON) < 24 mΩ @ VGS =4.5 V, ID =10 A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 456 7 8 UT4422G-S08-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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Ähnliche Beschreibung - UT4422G-S08-R |
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