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UT6402G-AG6-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer UT6402G-AG6-R
Bauteilbeschribung  N-CHANNEL POWER MOSFET
PDF  5 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT6402G-AG6-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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UT6402
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-152.D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
6.9
A
Pulsed Drain Current (Note 2)
IDM
20
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
74
110
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =30V, VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
1.9
3
V
On State Drain Current
ID(ON)
VDS =5V, VGS =4.5V
20
A
Static Drain-Source On-Resistance
(Note 2)
RDS(ON)
VGS =10V, ID =6.9A
22.5
28
mΩ
VGS =4.5V, ID =5.0A
34.5
42
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1MHz
680
820
pF
Output Capacitance
COSS
102
Reverse Transfer Capacitance
CRSS
77
108
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
VGS=10V, VDS=15V, RL=2.2Ω,
RG =3Ω
4.6
ns
Turn-ON Rise Time
tR
4.1
Turn-OFF Delay Time
tD(OFF)
20.6
Turn-OFF Fall-Time
tF
5.2
Total Gate Charge (Note 2)
QG
VDS =15V, VGS =10V, ID =6.9A
11.5 13.88 16.7
nC
Gate Source Charge
QGS
1.82
Gate Drain Charge
QGD
3.2
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A
0.76
1
V
Maximum Body-Diode Continuous
Current
IS
3
A
Reverse Recovery Time
tRR
IF=6.9 A, dI/dt=100A/μs
16.5
20
ns
Reverse Recovery Charge
QRR
IF=6.9 A, dI/dt=100A/μs
7.8
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5%.
3. Surface mounted on 1 in
2 copper pad of FR4 board.



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