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2N7002LLG-AE2-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2N7002LLG-AE2-R
Bauteilbeschribung  N-CHANNEL POWER MOSFET
PDF  3 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
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2N7002LLG-AE2-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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2N7002LL
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-284.e
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RG=1.0MΩ)
VDGR
60
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Non-repetitive (tP≦50μs)
VGSM
±40
V
Drain Current
Continuous(TC=25°C)
ID
115
mA
Pulse(Note 2)
460
Power Dissipation (TA = 25°C)
PD
225
mW
Derate above 25°C
1.8
mW /°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦300μs, Duty cycle≦2%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
556
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10µA
60
V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V (TJ=25°C)
1.0
µA
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250 µA
1.0
2.5
V
Drain-Source On-State Voltage
VDS(ON)
VGS=10V, ID=115mA
3.75
V
VGS=5V, ID=50mA
0.375
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=115mA(TC=25°C)
7.5
Ω
VGS=5V, ID=50mA(TC=25°C)
7.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
50
pF
Output Capacitance
COSS
25
pF
Reverse Transfer Capacitance
CRSS
5.0
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=25V, ID=115mA,
VGEN=10V, RG=25Ω, RL=50Ω
20
ns
Turn-OFF Delay Time
tD(OFF)
40
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=115mA, VGS=0V
1.5
V
Maximum Body-Diode Continuous Current
IS
115
mA
Source Current Pulsed
ISM
115
mA
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.



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