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1N90G-TND-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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1N90G-TND-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 7 page ![]() UNISONIC TECHNOLOGIES CO., LTD 1N90 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-496.E 1 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N90 is universally applied in high efficiency switch mode power supply. FEATURES * RDS(on) < 16Ω @ VGS=10V, ID = 0.5A * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL |
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Ähnliche Beschreibung - 1N90G-TND-R |
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