4N80L-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

4N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-505.F

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

800

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C

950

mV/°C

Drain-Source Leakage Current

IDSS

VDS=800V, VGS=0V

µA

VDS=640V, TC=125°C

100

µA

Gate-Source Leakage Current

Forward

IGSS

VDS=0V ,VGS=30V

100

Reverse

VDS=0V ,VGS=-30V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=2A

2.3

3.0

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V,VGS=0V,f=1.0MHz

680

880

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

8.6

SWITCHING PARAMETERS

Total Gate Charge

VDS=640V, VGS=10V,

ID=4A (Note 1,2)

Gate-Source Charge

QGS

4.2

Gate-Drain Charge

QGD

9.1

Turn-ON Delay Time

tD(ON)

VDD=400V, ID=4A,

RG=25Ω (Note 1,2)

Turn-ON Rise Time

100

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS =4A, VGS=0V

1.4

Body Diode Reverse Recovery Time

trr

VGS=0V, IS=4A,

dIF/dt=100A/μs (Note 1)

575

Body Diode Reverse Recovery Charge

QRR

3.65

μC

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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