UT100N03G-TQ2-R datasheet(4/8 Pages) UTC

4 / 8 page

UT100N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 8

www.unisonic.com.tw

QW-R502-193.H



ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250 µA

Drain-Source Leakage Current

IDSS

VDS=30 V,VGS =0 V

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±20 V

±100

ON CHARACTERISTICS

(Note2)

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

VGS =10 V, ID =50 A

3.05

5.3

Static Drain-Source On-Resistance

RDS(ON)

VGS =4.5 V, ID =40 A

4.2

mΩ

DYNAMIC PARAMETERS

(Note3)

Input Capacitance

CISS

9500

Output Capacitance

COSS

800

Reverse Transfer Capacitance

CRSS

VDS =15V, VGS =0V, f=1.0MHz

300

SWITCHING PARAMETERS

(Note3)

Total Gate Charge

Gate Source Charge

QGS

20.8

Gate Drain Charge

QGD

VDS =15V, VGS =5V, ID =16A

Turn-ON Delay Time

tD(ON)

25.7

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

128

200

Turn-OFF Fall-Time

VDD=15V, ID =1A, RGEN =6Ω

VGS =10 V

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=20 A,VGS=0 V

1.5

Drain-Source Diode Forward Current

Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.

2. Guaranteed by design, not subject to production testing.

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