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UT4232G-S08-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT4232G-S08-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-337.b N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=7A (VGS = 10V) * RDS(ON) < 22mΩ @ VGS=10 V, ID=7 A * RDS(ON) < 32mΩ @ VGS=4.5 V, ID=5 A SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 456 7 8 UT4232G-S08-R SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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