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4N65-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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4N65-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 4N65-R Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-A65.a 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-R is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 3.4Ω @VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL TO-220F1 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 4N65L-TF1-T 4N65G-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source MARKING INFORMATION PACKAGE MARKING TO-220F1 |
Ähnliche Teilenummer - 4N65-R |
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Ähnliche Beschreibung - 4N65-R |
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