30N06-Q

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-979. A



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate to Source Voltage

±20

V

Continuous Drain Current

30

A

21.3

A

Pulsed Drain Current (Note 2)

120

A

Avalanche Energy

Single Pulsed (Note 3)

250

mJ

Repetitive (Note 2)

8

mJ

Power Dissipation

TO-220

79

W

TO-220F/ TO-220F2

TO-220F1

45

TO-251/TO-252

46

Junction Temperature

+150

°C

Operation Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repeativity rating: pulse width limited by junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220

62

°C/W

TO-220F/ TO-220F2

TO-220F1

62.5

TO-251/TO-252

110

Junction to Case

TO-220

1.9

°C/W

TO-220F/ TO-220F2

TO-220F1

2.7

TO-251/TO-252

2.85