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UTT60N10L-TN3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UTT60N10L-TN3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTT60N10 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-664.E 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc. FEATURES * RDS(ON) < 24mΩ @ VGS=10V, ID=30A * High Switching Speed * High Current Capacity SYMBOL TO - 252 1 TO-220 1 1 TO-220F1 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UTT60N10L-TA3-T UTT60N10G-TA3-T TO-220 G D S Tube UTT60N10L-TF1-T UTT60N10G-TF1-T TO-220F1 G D S Tube UTT60N10L-TN3-R UTT60N10G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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Ähnliche Beschreibung - UTT60N10L-TN3-R |
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