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SI7216DN Datenblatt(PDF) 2 Page - Vishay Telefunken |
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SI7216DN Datenblatt(HTML) 2 Page - Vishay Telefunken |
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2 / 14 page ![]() www.vishay.com 2 Document Number: 73771 S11-1142-Rev. C, 13-Jun-11 Vishay Siliconix Si7216DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 94 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t 10 s RthJA 38 50 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.5 6 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 µA 40 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 43 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 5.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 13 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 10 A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 5 A 0.025 0.032 VGS 4.5 V, ID = 4 A 0.031 0.039 Forward Transconductancea gfs VDS = 15 V, ID = 5 A 25 S Dynamicb Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1 MHz 670 pF Output Capacitance Coss 90 Reverse Transfer Capacitance Crss 50 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 5 A 12.5 19 nC VDS = 20 V, VGS = 4.5 V, ID = 5 A 5.5 8.5 Gate-Source Charge Qgs 2 Gate-Drain Charge Qgd 2 Gate Resistance Rg f = 1 MHz 3.4 5.1 Turn-On Delay Time td(on) VDD = 20 V, RL = 4 ID 5 A, VGEN = 4.5 V, Rg = 1 16 25 ns Rise Time tr 142 215 Turn-Off Delay Time td(off) 16 25 Fall Time tf 712 Turn-On Delay Time td(on) VDD = 20 V, RL = 4 ID 5 A, VGEN = 10 V, Rg = 1 915 Rise Time tr 57 90 Turn-Off Delay Time td(off) 19 30 Fall Time tf 510 |
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