NVMFS5113PL datasheet(3/6 Pages) ONSEMI

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NVMFS5113PL

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TYPICAL CHARACTERISTICS

100

1000

10000

100000

0.60

0.90

1.20

1.50

1.80

2.10

−50

−25

100

125

150

175

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

0.050

1020

3040

708090 100

0.0

10.0

20.0

30.0

40.0

50.0

60.0

70.0

80.0

90.0

100.0

110.0

120.0

0.0

10.0

20.0

30.0

40.0

50.0

60.0

0.0

1.0

2.0

3.0

4.0

5.0

Figure 1. On−Region Characteristics

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−6 V to −10 V

−4.0 V

VGS = −2.8 V

VDS = −10 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (V)

ID = −17 A

TJ = 25°C

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (A)

VGS = −4.5 V

TJ = 25°C

VGS = −10 V

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

VGS = −10 V

ID = −17 A

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

TJ = 150°C

VGS = 0 V

−3.6 V

−3.2 V

TJ = 25°C

0.010

0.012

0.014

0.016

0.018

0.020

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0

1.00

1.30

1.60

1.90

2.00

1.70

1.40

1.10

0.70

0.80

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