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LM5035CSQX/NOPB Datenblatt(PDF) 15 Page - Texas Instruments |
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LM5035CSQX/NOPB Datenblatt(HTML) 15 Page - Texas Instruments |
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15 / 35 page ![]() RT = x 6.25 x 10 9 1 FOSC ¨ © § - 110 ns RFF x CFF = TON + 10% In 1- 2.5V VIN ¨ © § -1 2.5 Ps + 0.25 Ps In 1- 2.5V 48V ¨ © § -1 = = 51.4 Ps LM5035C www.ti.com SNVS631C – JANUARY 2010 – REVISED MARCH 2013 In addition to the PWM comparator, a Volt • Second Clamp comparator also monitors the RAMP pin. If the ramp amplitude exceeds the 2.5V threshold of the Volt • Second Clamp comparator, the on-time is terminated. The CFF ramp capacitor is discharged by an internal 32 Ω discharge MOSFET controlled by the V•S Clamp comparator. If the RAMP signal does not exceed 2.5V before the end of the clock period, then the internal clock will enable the discharge MOSFET to reset capacitor CFF. By proper selection of RFF and CFF values, the maximum on-time of HO and LO can be set to the desired duration. The on-time set by the Volt • Second Clamp varies inversely to the line voltage because the RAMP capacitor is charged by a resistor (RFF) connected to VIN while the threshold of the clamp is a fixed voltage (2.5V). An example will illustrate the use of the Volt • Second Clamp comparator to achieve a 50% duty cycle limit at 200kHz with a 48V line input. A 50% duty cycle at a 200kHz requires a 2.5µs on-time. To achieve this maximum on-time clamp level: (1) The recommended capacitor value range for CFF is 100 pF to 1000 pF. 470 pF is a standard value that can be paired with an 110 k Ω to approximate the desired 51.4µs time constant. If load transient response is slowed by the 10% margin, the RFF value can be increased. The system signal-to-noise will be slightly decreased by increasing RFF x CFF. Oscillator, Sync Capability The LM5035C oscillator frequency is set by a single external resistor connected between the RT and AGND pins. To set a desired oscillator frequency, the necessary RT resistor is calculated from: (2) For example, if the desired oscillator frequency is 400kHz (HO and LO each switching at 200 kHz) a 15 k Ω resistor would be the nearest standard one percent value. Each output (HO, LO, SR1 and SR2) switches at half the oscillator frequency. The voltage at the RT pin is internally regulated to a nominal 2V. The RT resistor should be located as close as possible to the IC, and connected directly to the pins (RT and AGND). The tolerance of the external resistor, and the frequency tolerance indicated in the Electrical Characteristics, must be taken into account when determining the worst case frequency range. The LM5035C can be synchronized to an external clock by applying a narrow pulse to the RT pin. The external clock must be at least 10% higher than the free-running oscillator frequency set by the RT resistor. If the external clock frequency is less than the RT resistor programmed frequency, the LM5035C will ignore the synchronizing pulses. The synchronization pulse width at the RT pin must be a minimum of 15 ns wide. The clock signal should be coupled into the RT pin through a 100 pF capacitor or a value small enough to ensure the pulse width at RT is less than 60% of the clock period under all conditions. When the synchronizing pulse transitions low-to-high (rising edge), the voltage at the RT pin must be driven to exceed 3.2V volts from its nominal 2 VDC level. During the clock signal’s low time, the voltage at the RT pin will be clamped at 2 VDC by an internal regulator. The output impedance of the RT regulator is approximately 100 Ω. The RT resistor is always required, whether the oscillator is free running or externally synchronized. Gate Driver Outputs (HO & LO) The LM5035C provides two alternating gate driver outputs, the floating high side gate driver HO and the ground referenced low side driver LO. Each driver is capable of sourcing 1.25A and sinking 2A peak. The HO and LO outputs operate in an alternating manner, at one-half the internal oscillator frequency. The LO driver is powered directly by the VCC regulator. The HO gate driver is powered from a bootstrap capacitor connected between HB and HS. An external diode connected between VCC (anode pin) and HB (cathode pin) provides the high side gate driver power by charging the bootstrap capacitor from VCC when the switch node (HS pin) is low. When the high side MOSFET is turned on, HB rises to a peak voltage equal to VVCC + VHS where VHS is the switch node voltage. Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 15 Product Folder Links: LM5035C |
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