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ACE5820 Datenblatt(PDF) 2 Page - ACE Technology Co., LTD.

Teilenummer ACE5820
Bauteilbeschribung  DFNWB2X2-6L N-Channel MOSFETS
PDF  5 Pages
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE5820 Datenblatt(HTML) 2 Page - ACE Technology Co., LTD.

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ACE5820
DFNWB2X2-6L N-Channel
MOSFETS
VER 1.1
2
Ordering information
ACE5820 XX + H
Mosfet
Electrical Characteristics (Ta=25 OC unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
20
V
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
1
uA
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
±100
nA
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
0.35
1
V
Drain-source on-resistance(note 3)
RDS(on)
VGS =4.5V, ID =9.7A
11
mΩ
VGS =2.5V, ID =9A
13
mΩ
VGS =1.8V, ID =8.1A
16
mΩ
VGS =1.5V, ID =4.5A
22
mΩ
VGS =1.2V, ID =2.4A
41
mΩ
Forward tranconductance(note 3)
gFS
VDS =4V, ID =9.7A
20
S
Diode forward voltage (note 3)
VSD
IS=10A, VGS = 0V
1.2
V
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
VDS =4V,VGS =0V,f =1MHz
1800
pF
Output Capacitance
Coss
650
pF
Reverse Transfer Capacitance
Crss
450
pF
Gate Resistance
Rg
f=1MHz
2.5
Ω
LN : DFNWB2*2-6L
Pb - free
Halogen - free



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