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ACE6344B Datenblatt(PDF) 8 Page - ACE Technology Co., LTD. |
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ACE6344B Datenblatt(HTML) 8 Page - ACE Technology Co., LTD. |
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8 / 11 page ![]() ACE6344B N&P-Channel Enhancement Mode MOSFET VER 1.1 8 Typical Characteristics (P-Channel) -Vgs Gate-Source Voltage(V) TJ -Junction Temperature (℃) Figure 7 Transfer Characteristics Figure 8 Drain – Source On-Resistance -Vgs Gate-Source Voltage(V) -Vsd Drain – Source Voltage(V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Qg Gate Charge(nC) -Vsd Source-Drain Voltage(V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward |
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