K6X1008C2D datasheet(4/10 Pages) SAMSUNG

4 / 10 page

CMOS SRAM

K6X1008C2D Family

Revision 1.0

September 2003

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. Commercial Product: TA=0 to 70

°C, Otherwise specified

Industrial Product: TA=-40 to 85

°C, Otherwise specified

Automotive Product: TA=-40 to 125

°C, Otherwise specified

2. Overshoot: Vcc+3.0V in case of pulse width

≤30ns.

3. Undershoot: -3.0V in case of pulse width

≤30ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

4.5

5.0

5.5

Ground

Vss

Input high voltage

VIH

2.2

Vcc+0.52)

Input low voltage

VIL

-0.53)

0.8

CAPACITANCE1) (f=1MHz, TA=25

°C)

1. Capacitance is sampled, not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

Input/Output capacitance

CIO

VIO=0V

DC AND OPERATING CHARACTERISTICS

Item

Symbol

Test Conditions

Min Typ Max Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

µA

Output leakage current

ILO

CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc

-1

µA

Operating power supply current

ICC

IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read

Average operating current

ICC1

Cycle time=1

µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V,

VIN

≤0.2V or VIN≥VCC-0.2V

ICC2

Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH,

VIN=VIH or VIL

Output low voltage

VOL

IOL=2.1mA

0.4

Output high voltage

VOH

IOH=-1.0mA

2.4

Standby Current(TTL)

ISB

CS1=VIH, CS2=VIL, Other inputs=VIH or VIL

0.4

Standby Current(CMOS)

ISB1

CS1

≥Vcc-0.2V, CS2≥Vcc-0.2V or

CS2

≤0.2V, Other inputs=0~Vcc

K6X1008C2D-B

µA

K6X1008C2D-F

µA

K6X1008C2D-Q

µA

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