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DNX-MJS Datenblatt(PDF) 3 Page - DOMINANT Semiconductors |
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DNX-MJS Datenblatt(HTML) 3 Page - DOMINANT Semiconductors |
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3 / 13 page ![]() Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005) Reverse voltage ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature Power dissipation (at room temperature) Thermal resistance - Junction / ambient, Rth JA - Junction / solder point, Rth JS (Mounting on FR4 PCB, pad size >= 16 mm2 per pad) 50 100 12 2000 125 -40 … +100 -40 … +100 135 480 230 mA mA V V ˚C ˚C ˚C mW K/W K/W 29/09/2015 V9.0 3 AllnGaP : DNx-MJS DOMINANT Opto Technologies Innovating Illumination TM Unit Characteristics Value Temperature coefficient of IF = 30mA; 0 ˚C <= T <= 100 ˚C Temperature coefficient of VF (typ) IF = 30mA; 0 ˚C <= T <= 100 ˚C Temperature coefficient of IV (typ) IF = 30mA; 0 ˚C <= T <= 100 ˚C nm / K Symbol dom (typ) dom (typ) TC 0.06 0.07 0.09 0.10 TCV -5.9 -2.3 -2.0 -1.7 mV / K TCIV -0.7 -0.8 -0.9 -1.0 % / K DNS-MJS DNA-MJS DNO-MJS DNY-MJS Part Number DNS-MJS DNA-MJS DNO-MJS DNY-MJS DNS-MJS DNA-MJS DNO-MJS DNY-MJS |
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