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AS4LC4M16S0 Datenblatt(PDF) 21 Page - Alliance Semiconductor Corporation

Teilenummer AS4LC4M16S0
Bauteilbeschribung  3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
PDF  24 Pages
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Hersteller  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC4M16S0 Datenblatt(HTML) 21 Page - Alliance Semiconductor Corporation

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AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
21
Interleaved bank read waveform
(BL = 4, CL = 3, Autoprecharge)
†BA0 and BA1 together determine which bank undergoes operations. AP = internal precharge begins.
Interleaved bank read waveform
(BL = 8, CL = 3)
†BA0 and BA1 together determine which bank undergoes operations.
CLK
CS
RAS
CAS
WE
A10
A0–A9, A11
DQM
CKE
DQ
tRC
tRC
tRC
tRC
tRAS
tRP
tRAS
tRAS
tRP
tRAS
tRCD
tRCD
tRCD
tRCD
QAa0
QAa3
QAa2
QAa1
QBb3
QBb2
QBb1
QAa0
QAa3
QAa2
QAa1
QBb0
QBb2
QBb1
RAa
RAa
RAb
RAb
CAa
CBb
CBd
RAd
RAd
tRRD
tRRD
tRRD
tRRD
Bank A
Bank B
Active
Read
Active
AP
Active
Read
AP
Read
Active
AP
Read
Active
BA0/BA1†
Bank
Bank
Bank
Bank
Bank
Bank
Bank
Bank
Bank
tRP
tRAS
RAc
RAc
CBc
RAe
RAe
QBb0
CLK
CS
RAS
CAS
WE
A10
A0–A9, A11
DQM
CKE
DQ
tRC
tRC
tRC
tRAS
tRAS
tRAS
tRP
tRP
tRP
tRCD
tRCD
tRCD
RAa
RAa
CAa
RBb
RBb
CBb
RAc
RAc
CAc
QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QBb0 QBb1
QBb4 QBb5 QBb6 QBb7
QAc0
QAc1
Bank A
Bank B
Active Read
Precharge
Read
Precharge
Active
Precharge
Active
Read
BA0/BA1†
Bank
Bank
Bank
Bank
Bank
Bank
Bank
Bank
Bank



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