BDP950 datasheet(2/4 Pages) INFINEON

2 / 4 page

BDP948, BDP950

Jul-06-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BDP948

BDP950

V(BR)CEO

Collector-base breakdown voltage

IC = 100 µA, IB = 0

BDP948

BDP950

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 45 V, IE = 0

ICBO

100

Collector cutoff current

VCB = 45 V, IE = 0 , TA = 150 °C

ICBO

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain 1)

IC = 10 mA, VCE = 5 V

IC = 500 mA, VCE = 1 V

IC = 1 A, VCE = 2 V

hFE

475

Collector-emitter saturation voltage1)

IC = 2 A, IB = 0.2 A

VCEsat

0.5

Base-emitter saturation voltage 1)

IC = 2 A, IB = 0.2 A

VBEsat

1.3

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

100

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

1) Pulse test: t

≤=300µs, D = 2%

BDP950 Datenblatt(PDF) 2 Page - Infineon Technologies AG

BDP950 Datenblatt(HTML) 2 Page - Infineon Technologies AG

Html Pages

1 2 3 4

Datenblatt Download

Link URL