37N60DM2 datasheet(3/15 Pages) STMICROELECTRONICS

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STB37N60DM2AG

Electrical ratings

DocID028271 Rev 1

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Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM(1)

Drain current (pulsed)

112

PTOT

Total dissipation at Tcase = 25 °C

210

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 28 A, di/dt=800 A/μs; VDS peak < V(BR)DSS,VDD = 80% V(BR)DSS.

(3) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.6

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

Notes:

(1) When mounted on a 1-inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

EAS(1)

Single pulse avalanche energy

650

Notes:

(1) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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