STP10N65K3 datasheet(4/21 Pages) STMICROELECTRONICS

Teilenummer	STP10N65K3

Bauteilbeschribung	N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

PDF	21 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3

4/21

DocID15732 Rev 4

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

1µA

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

4.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 3.6 A

0.75

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1180

Coss

Output capacitance

125

Crss

Reverse transfer

capacitance

-14

Coss eq.

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0

Intrinsic gate

resistance

f=1 MHz, ID=0

Total gate charge

VDD = 520 V, ID = 7.2 A,

VGS = 10 V

(see Figure 18)

-42

Qgs

Gate-source charge

7.4

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

VDD = 310 V, ID = 3.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17)

14.5

Rise time

td(off)

Turn-off-delay time

Fall time

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