IPU07N03L datasheet(2/8 Pages) INFINEON

2 / 8 page

2003-01-17

Page 2

IPD07N03L

IPU07N03L

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Characteristics

Thermal resistance, junction - case

RthJC

0.68

K/W

Thermal resistance, junction - ambient, leaded

RthJA

100

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

V(BR)DSS

Gate threshold voltage, VGS = VDS

ID = 80 µA

VGS(th)

1.2

1.6

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C

VDS=30V, VGS=0V, Tj=125°C

IDSS

0.01

100

µA

Gate-source leakage current

VGS=20V, VDS=0V

IGSS

100

Drain-source on-state resistance

VGS=4.5V, ID=30A

RDS(on)

7.7

9.9

Ω

Drain-source on-state resistance

VGS=10V, ID=30A

RDS(on)

5.7

6.8

1Current limited by bondwire ; with an R

thJC = 1K/W the chip is able to carry ID= 116A at 25°C, for detailed

information see app.-note ANPS071E available at www.infineon.com/optimos

2Defined by design. Not subject to production test.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

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