P3NK50Z datasheet(1/14 Pages) STMICROELECTRONICS

Teilenummer	P3NK50Z

Bauteilbeschribung	Gate charge minimized

PDF	14 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is information on a product in full production.

August 2013

DocID025103 Rev 1

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STP3NK50Z

N-channel 500 V, 2.8

Ω typ., 2.3 A Zener-protected SuperMESH™

Power MOSFET in a TO-220 package

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Extremely high dv/dt capability

• ESD improved capability

• 100% avalanche tested

• Gate charge minimized

• Zener-protected

Applications

• Switching applications

Description

This device is an N-channel Zener-protected

Power MOSFET developed using

STMicroelectronics' SuperMESH™ technology,

achieved through optimization of ST's well

established strip-based PowerMESH™ layout. In

addition to a significant reduction in on-

resistance, this device is designed to ensure a

high level of dv/dt capability for the most

demanding applications.

TO-220

1

2

3

TAB

D(2, TAB)

G(1)

S(3)

AM01476v1

Order code

VDS

RDS(on)max.

ID

PTOT

STP3NK50Z

500 V

3.3

Ω

2.3 A

45 W

Table 1. Device summary

Order code

Marking

Packages

Packaging

STP3NK50Z

P3NK50Z

TO-220

Tube

www.st.com

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