STTH16L06CTY datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STTH16L06C-Y

4/9

DocID026936 Rev 2

Figure 1. Conduction losses versus average

current

Figure 2. Forward voltage drop versus forward

current

Figure 3. Peak reverse recovery current versus

dIF/dt (typical values, per diode)

Figure 4. Reverse recovery time versus dIF/dt

(typical values, per diode)

Figure 5. Reverse recovery charges versus

dIF/dt (typical values, per diode)

Figure 6. Softness factor versus dIF/dt

(typical values, per diode)

024

P(W)

δ=tp/T

δ = 0.05

δ = 1

(A)

F(AV)

δ = 0.1 δ = 0.2

δ = 0.5

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

(A)

T =150°C

(typical values)

T =25°C

(maximum values)

T =150°C

(maximum values)

(V)

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

100

150

200

250

300

350

400

100

150

200

250

300

350

400

450

500

t (ns)

dI /dt(A/µs)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

I =2 x I

F(AV)

100

150

200

250

300

350

400

450

500

550

600

650

700

750

800

100

200

300

400

500

Q (nC)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

dI /dt(A/µs)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

150

200

250

300

350

400

450

500

S factor

dI /dt(A/µs)

I < 2 x I

T =125°C

F(AV)

V =400V

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