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STPSC8TH13TI Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STPSC8TH13TI
Bauteilbeschribung  Dual 650 V power Schottky silicon carbide diode in series
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STPSC8TH13TI Datenblatt(HTML) 3 Page - STMicroelectronics

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STPSC8TH13TI
Characteristics
Table 5. Dynamic electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Typ.
Unit
Qcj
(1)
Total capacitive charge
VR = 400 V
23.5
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
414
pF
VR = 400 V, Tc = 25 °C, F = 1 MHz
38
1. Most accurate value for the capacitive charge:
Figure 1. Forward voltage drop versus forward
current (typical values, low level, per diode)
Figure 2. Forward voltage drop versus forward
current (typical values, high level, per diode)
Figure 3. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 4. Peak forward current versus case
temperature
(per diode)



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