IRF60B217 datasheet(4/10 Pages) INFINEON

4 / 10 page

2016– 01-05

IRF60B217

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

Fig 4. Typical Output Characteristics

Fig 3. Typical Output Characteristics

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs.

Gate-to-Source Voltage

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

 60µs PULSE WIDTH

Tj = 25°C

4.5V

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

 60µs PULSE WIDTH

Tj = 175°C

4.5V

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

3.0

4.0

5.0

6.0

7.0

8.0

VGS, Gate-to-Source Voltage (V)

0.1

100

1000

VDS = 30V

 60µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

-60 -40 -20

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

ID = 36A

VGS = 10V

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

1020

405060

QG Total Gate Charge (nC)

VDS= 48V

VDS= 30V

VDS= 12V

ID= 36A

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