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08090 Datenblatt(PDF) 4 Page - Infineon Technologies AG

Teilenummer 08090
Bauteilbeschribung  LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
PDF  10 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

08090 Datenblatt(HTML) 4 Page - Infineon Technologies AG

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Data Sheet
4
2004-04-05
PTF080901
50.0
50.5
51.0
51.5
52.0
24
26
28
30
32
Supply Voltage (V)
Output Power (at 1 dB Compression)
vs. Supply Voltage
IDQ = 650 mA, f = 960 MHz
IS-95 CDMA Performance
VDD = 28 V, IDQ = 700 mA, f = 880 MHz
0
10
20
30
40
50
60
40
41
42
43
44
45
Output Power (dBm), Avg.
-70
-65
-60
-55
-50
-45
-40
Efficiency
ACP F
C – 0.75 MHz
ACPR F
C + 1.98 MHz
Power Sweep
VDD = 28 V, f = 960 MHz
16.5
17.0
17.5
18.0
18.5
19.0
37
39
41
43
45
47
49
51
53
Output Power (dBm)
I
DQ = 820 mA
I
DQ = 480 mA
I
DQ = 650 mA
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 650 mA, f = 960 MHz
14
15
16
17
18
19
20
40
43
46
49
52
Output Power (dBm)
10
20
30
40
50
60
70
Efficiency
Gain
Typical Performance (cont.)
All published data at TCASE = 25°C unless otherwise indicated.



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