ACE2607B datasheet(1/5 Pages) ACE

Teilenummer	ACE2607B

Bauteilbeschribung	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Hersteller	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE2607B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.3

1

Description

ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to

minimize on-state resistance. This device particularly suits for low voltage application such as portable

equipment, power management and other battery powered circuits, and low in-line power loss are needed

in a very small outline surface mount package.

Features

 V

DS(V)=-30V, ID=-3.5A

 R

DS(ON)=52mΩ@VGS=-10V

 R

DS(ON)=68mΩ@VGS=-4.5V

 High density cell design for low R

DS(ON)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Note 1)

Continuous TA=25℃

ID

-3.5

A

Pulse (Note 2)

-20

Power Dissipation

(1) (Note 1)

PD

650

mW

Operating and Storage Temperature Range TJ,TSTG -55 to 150

OC

Packaging Type

SOT-23-6L

1

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ACE2607B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD.

ACE2607B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD.

Ähnliche Teilenummer - ACE2607B

Ähnliche Beschreibung - ACE2607B

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