2

CMPA1D1E025F Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

Fax: +1.919.869.2733

www.cree.com/RF

Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific

product and/or vendor endorsement, sponsorship or association.

Absolute Maximum Ratings (not simultaneous)

Parameter

Symbol

Rating

Units

Conditions

Drain-source Voltage

V

DSS

84

V

DC

25˚C

Gate-source Voltage

V

GS

-10, +2

V

DC

25˚C

Power Dissipation

P

DISS

94

W

Storage Temperature

T

STG

-55, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

10

mA

25˚C

T

S

245

˚C

Screw Torque

τ

40

in-oz

Thermal Resistance, Junction to Case

R

θ

JC

1.5

˚C/W

P

Case Operating Temperature

T

C

-40, +85

˚C

CW, P

Note:

1

Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

Gate Threshold

V

GS(TH)

-3.8

-3.0

-2.3

V

V

Gate Quiscent Voltage

V

Q

–

-2.7

–

V

V

I

DS

14.6

16.4

–

A

V

Drain-Source Breakdown Voltage

V

BD

84

100

–

V

V

Small Signal Gain

S21

–

24

–

dB

V

Input Return Loss

S11

–

-7

–

dB

V

Output Return Loss

S22

–

-7

–

dB

V

Output Mismatch Stress

VSWR

–

–

5:1

Y

No damage at all phase angles, V

P

Notes:

1

Measured on-wafer prior to packaging.

2

Scaled from PCM data.

3

Measured in the CMPA1D1E025F-AMP